Previously published editions
Volume 45 Future Fab International Volume 45 - April 25, 2013
Why 450 mm? Reduce manufacturing cost, stimulate another wave of innovation on equipment and manufacturing methods, and drive toward greener manufacturing. Semiconductor manufacturing costs have increased rapidly as technology complexity has accelerated at sub-20 nm nodes. Process steps… have added costs. Evolving technology drives the need for periodic wafer size increases to maintain historical cost reduction trends.
John Lin, Paul Farrar, G450C
Volume 44 Future Fab International Volume 44 - January 10, 2013
Welcome to this issue of Future Fab International featuring the updated 2012 International Technology Roadmap for Semiconductors (ITRS). This year we celebrate the 20th anniversary of technology roadmapping!...the number of International Technology Working Groups (ITWGs) continues to grow; from the initial 11, we have now reached 17 as the ITRS continues to expand in order to represent the evolving semiconductor industry.
Dr. Paolo Gargini, Chairman of ITRS
Volume 43 Future Fab International Volume 43 - October 25, 2012
… some are predicting that CMOS will soon reach the proverbial “brick wall” of the laws of physics, where conventional scaling becomes impossible (or at least impractical). If this does happen, the results will not only be felt in the fab, but will also negatively impact global economies that are influenced by demand for the latest and greatest technologies.
David Hemker, CTO at Lam Research Corp
Volume 42 Future Fab International Volume 42 - July 05, 2012
Understanding where technology is heading is more than speculating about what new and anticipated breakthroughs are meaningful. Predicting which technologies will move into the mainstream ten years from now is guesswork, but describing how they will emerge can contribute to our strategic thinking.
Dan Armbrust, President and CEO, SEMATECH
Volume 41 Future Fab International Volume 41 - April 26, 2012
A dramatic increase in the signal to noise ratio can be achieved by employing a mathematical procedure called Principle Component Analysis (PCA). In PCA, the observed variables are reduced to a smaller number of principle components that will account for most of the variance…
Frieder H. Baumann, IBM Micorelectronics
Volume 40 Future Fab International Volume 40 - January 12, 2012
We are pleased to be able to bring you our annual special ITRS Focus issue. Put together in close collaboration with the International Technology Roadmap for Semiconductors (ITRS), we present to you rewrites for each of the Technology Working Groups (TWGs), including the newest TWG, MEMS. Once again the issue starts out with a special introduction from the chair of the ITRS, one of our longest-standing editorial board members, Dr. Paolo Gargini.
Wishing you a successful 2012!
Volume 39 Future Fab International Volume 39 - October 27, 2011
“The development and characterization of new materials and fabrication methods in the semiconductor industry requires a new capability to quantify the thermal and thermodynamic properties of materials at small scales and to perform dynamic thermal measurements at high rates. Along with other researchers, the National Institute of Standards and Technology (NIST) is working on measurement techniques, methods and standards to address needs related to the quantification of reaction temperatures, thermal stability and heats of reactions for nanoscaled materials critical for next-generation semiconductor devices.”
David LaVan – NIST
Volume 38 Future Fab International Volume 38 - July 07, 2011
“Over the past 30 years, minimum feature sizes for advanced integrated circuits have been reduced by over 100X, from several microns in the early 1980s to just 32 nm today, with plans for sub-20 nm production firmly in place at most major manufacturers. While predictions abound that the relentless pace of geometry shrinks will have to end at some point, it seems clear the industry is well on target to continue shrinking geometries to less than 10 nm before the end of the decade. What is less clear is which lithographic technology will be used in producing these leading-edge devices…” Moshe Preil, GLOBALFOUNDRIES
Volume 37 Future Fab International Volume 37 - April 27, 2011
“It is a unique benchmark that more than 2850 different types of semiconductor devices are being concurrently fabricated with a total volume of over 1 million pieces of 8” equivalent wafers every month in the leading foundry. If including active devices not making deliveries within the same accounting periods as well, this number would be magnified a few times more. In addition, this benchmark is being constantly rewritten since the rebound from the financial crisis in 2009.”
Keung Hui, Jason Mou
Volume 36 Future Fab International Volume 36 - January 11, 2011
Welcome to our first 2011 issue of Future Fab.
We are pleased to be able to bring you our annual ITRS Focus issue. Put together in close collaboration with the International Technology Roadmap for Semiconductors (ITRS), we present to you updates for each of the Technology Working Groups (TWGs). As always, we are privileged to have a special introduction from the chair of the ITRS, one of our longest-standing editorial board members, Dr. Paolo Gargini. We are also pleased to be able to bring you additional suggested reading and additional links.
Wishing you a successful 2011!
Volume 35 Future Fab International Volume 35 - November 06, 2010
"The advancement of predictive modeling in lithography in the last 10 years has been instrumental to
the continuous scaling of semiconductor devices. Today, all computational lithography efforts such as
OPC are totally dependent on the capability to model the lithography and metrology processes. We
discuss some of the current modeling practices in optics, mask, resist and etching, leading to the "holy
grail" of predictive modeling in the complete patterning process which we call "virtual fab." Modeling
of novel technologies such as diblock polymer patterning is also discussed to show the unlimited
opportunities in the future."
Semiconductor Research and Development Center, IBM
Volume 34 Future Fab International Volume 34 - July 14, 2010
"Several studies show that with scaling of technology, the reduced form factor and low power consumption benefits of 3D integrated technology outweigh such challenges as high thermal stress and reliability issues. Here we further investigate performance benefits of 3D in terms of latency and throughput for applications such as many-core architecture."
Awet Yemane Weldezion
KTH Royal Institute of Technology
Volume 33 Future Fab International Volume 33 - April 27, 2010
Tomorrow’s smart systems will require extreme computation and storage capabilities, orders of magnitude above
what the processors and memories of today can deliver. Thus there is a need to keep on scaling. But because we are
closing in on the physical limits of IC scaling, we have to push the technology to its extreme…>
Volume 32 Future Fab International Volume 32 - January 15, 2010
Welcome to our first 2010 issue of Future Fab. We are pleased to be able to bring you our second annual ITRS Focus issue. Put together in close collaboration with the International Technology Roadmap for Semiconductors (ITRS), we are happy to present to you an overview of each of the Technology Working Groups (TWGs). We again have a special introduction from the Chair of the ITRS, one of our longest-standing Editorial Board members, Dr. Paolo Gargini, who formally introduces the ITRS content. And we are very pleased to be able to bring you a synopsis from each and every technology working group’s re-write with additional suggested reading and additional links. We hope that this issue helps you to understand the goals and the importance of the ITRS and that it helps you to obtain your goals.
Wishing you a successful 2010!
Volume 31 Future Fab International Volume 31 - October 29, 2009
Welcome to the Oct 2009 issue of Future Fab – we made it! With all of the craziness and uncertainties of the last 18 months, we are proud of the fact that not only are we still here, but we have continued to build on our strategic partnerships to bring you the readers the best of the best in semiconductor manufacturing & R&D. Starting this month we are thrilled to introduce our newest collaborator, CEA/Leti – they join our already unrivalled list of partners.
As you enjoy this issue of Future Fab, we want to remind you that we have our second annual ITRS dedicated issue of Fab coming out shortly – this is the re-write of the roadmap and we have made it even easier to navigate – so make sure that you keep an eye out for our launch newsletter.
Until then….enjoy and as the season rapidly approaches – happy holidays!
Volume 30 Future Fab International Volume 30 - July 09, 2009
Welcome to the latest issue of Future Fab!
With this issue, we are pleased to welcome two of our newest panel members: Sitaram Arkalgud, director of SEMATECH’s Interconnect division, who is helping to spearhead our WFPI section; and Liam Madden, vice president of Silicon Technology in the PPD group at Xilinx, who is helping head up the new Chip Architecture & Integration section of Future Fab.
In addition, we are thrilled to announce our latest collaborator – College of Nanoscale Science and Engineering (CNSE). We are looking forward to working more closely together.
Our next issue will be out in October – so until then, enjoy!
Volume 29 Future Fab International Volume 29 - April 29, 2009
Welcome to the April 2009 issue of Future Fab. With this issue, we are pleased to officially welcome our newest partner, the Global Semiconductor Alliance (GSA). We’re excited to be working with them.
With all of the negative press that continues to bombard the news, Internet and our industry, we are only too pleased to offer you a break from it all. Here in our 29th issue of Future Fab, we present to you more unbiased, leading-edge and thought-provoking technical papers, from some of the most influential organizations globally. We hope you will find this issue both interesting and informative.
Volume 28 Future Fab International Volume 28 - January 15, 2009
Welcome to this very special issue of Future Fab. We are pleased to be able to bring you our first annual ITRS Focus issue. For the first time in our history, we are dedicating an entire issue of Future Fab to our newest collaborators: the International Technology Roadmap for Semiconductors (ITRS). We have a special introduction from the Chair of the ITRS, one of our longest-standing Editorial Board members, Dr. Paolo Gargini, who formally introduces the ITRS content. And we are so pleased to be able to bring you highlights and updates from each and every technology working group – we hope that this issue helps you to understand the goals and the importance of the ITRS and that it helps you to obtain your goals.
A Very Happy 2009 to all of you!
Volume 27 Future Fab International Volume 27 - October 30, 2008
Welcome to the latest issue of Future Fab International! We are pleased to introduce the newest member of the Future Fab Editorial Panel, helping to lead the Manufacturing Systems & Software section: Tom Sonderman, vice president, Manufacturing Systems Technology, AMD. And helping to spearhead our Future Visions & Current Concerns section is Luigi Columbo, Fellow at Texas Instruments. Beginning in this issue, Mr. Sonderman and Dr. Columbo shares their thoughts.
Below is a sample of what you will find in this issue – please sign up, log in, download and tell us what you think. If you like what we are doing with Future Fab – tell a friend – the more people visit, the more content we can give you. And don’t forget that we have almost 1,000 archived technical articles – that you can view for free!
Volume 26 Future Fab International Volume 26 - July 10, 2008
In this issue, we are thrilled to welcome not only our newest industry collaborator
– the Semiconductor Industry Association (SIA), we are also excited to
welcome and work with our newest editorial panel members, Dr. Dan Edelstein,
IBM Fellow and Manager of BEOL technology Strategy at IBM, Dr. William Chen
Senior technical advisor at Advanced Semiconductor Engineering (ASE) and Dr.
Pushkar Apte, Vice President of Technical Programs at SIA. We look forward to
their direction and insight.
Below is a sample of what you will find in this issue – please sign up,
log in. download and tell us what you think – if you like what we are
doing with Future Fab – tell a friend – the more people visit, the
more content we can give you. And don’t forget that we have almost 1,000
archived technical articles – that you can view for free!
Volume 25 Future Fab International Volume 25 - April 30, 2008
Here is the first-ever APRIL issue of Future Fab International. Download your FREE issue now.
In this issue we are pleased to welcome and to introduce you to the following new members to our already esteemed editorial board: Stephen Buffat - Nantero - Manager, Jordan Valley Innovation Center; Janice Golda - Intel Corp - Director, Lithography Capital Equipment Development; Lode Lauwers - IMEC - Director, Strategic Program Partnerships; Davide Lodi - Numonyx - Manager, Wet Processes & Metrology Engineering ; Kazu Yamada - NEC Electronics America -VP & General Manager, Custom SoC Solutions Strategic Business Unit. Their guidance & wisdom is of course invaluable.
Take a look below to see what you will find in this issue. If you are interested in the content of any of our past issues simply log in and use the left-hand nav buttons to view – it’s easy and it’s FREE.
We hope you enjoy this issue.
Volume 24 Future Fab International Volume 24 - January 25, 2008
As promised, the first new digital edition of Future Fab is here!
This digital edition starts off our new quarterly publishing cycle, which means the editorial you want will be available more frequently and always available at a touch of your fingertips. Our well-established relationships with the leading industry associations combined with our 4x per year publishing cycle allows us to cover more topics and provide you with more of what you want from us — unbiased industry information.
Volume 23 Future Fab International, Volume 23 - July 09, 2007
Volume 22 Future Fab International, Volume 22 - January 09, 2007
Volume 21 Future Fab International, Volume 21 - July 01, 2006
Volume 20 Future Fab International Volume 20 - January 07, 2006
Volume 19 Future Fab International Volume 19 - June 28, 2005
Volume 18 Future Fab International Volume 18 - January 12, 2005
Volume 17 Future Fab International Volume 17 - June 21, 2004
Volume 16 Future Fab International Volume 16 - February 03, 2004
Volume 15 Future Fab International Volume 15 - July 11, 2003
Volume 14 Future Fab International Volume 14 - February 11, 2003
Volume 13 Future Fab International Volume 13 - July 08, 2002
Volume 12 Future Fab International Volume 12 - February 02, 2002
Volume 11 Future Fab International Volume 11 - June 29, 2001
Volume 10 Future Fab International Volume 10 - July 01, 2001
Volume 9 Future Fab International Volume 9 - January 07, 2000
Volume 8 Future Fab International Volume 8 - July 01, 2000