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The main materials and process integration
issues responsible for the delayed
production introduction of ArF lithography
from 130nm technology node in 2001 to
90nm technology node in 2003-2004 time
frame, are presented. These issues are
significant, but they are not showstoppers,
as creative ways exist for solving them. The
first step is to tune processes to match
material and chemical properties of ArF
resists. Processes that have worked well at
longer lithographic wavelengths are not
optimal for ArF resists. Figure 4 shows reflectivity swing oscillations as a function of the thickness of two acrylate resists coated on various substrates. The period of ~66nm in Figure 4a corresponds to the refractive index of n=1.46 (experimentally measured value of n ~ 1.250 and k ~ 0.019) for acrylate resist #2 at 193nm, while the period of ~52nm in Figure 4b corresponds to the refractive index n=1.85 (experimentally measured value of n ~ 1.45 and k ~ 0.022) of acrylate resist #4 at 193nm wavelength[10].
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