In Association With

Home
About Future-Fab
Download New Issue
Contact Us
Volume Archives
Editorial Panel

FUTURE FAB ARCHIVES


Resist Road to the 22 nm Technology Node
(6/21/2004) Future Fab Intl. Issue 17
By Uzodinma Okoroanyanwu, Advanced Micro Devices
Jeroen H. Lammers, Philips Research
Print Article Print this paper
Send As Email Send as email

The resist road to the 22 nm technology node is going to be a difficult one to ply. Conventional resist technology will be resolution-limited at the 22 nm design rule. Chemical amplification chemistry runs into “diffusional limits” with high-activation energy resist systems that are not extendible to this node, while lowactivation energy ones may be extendible to this node, but at the cost of significant outgassing and poor line-edge roughness (LER).

While the chemical amplification concept has served the semiconductor industry very well since its invention in the early 1980s[2-4] in terms of high sensitivity and resolution, it is becoming apparent that by 2016, when the 22 nm technology node is expected to be in production, the very attributes of this concept that made resists based on it become the workhorses of the industry for the last 25 years will unfortunately become resolutionlimiting due to uncontrollable diffusion, image spreading, or resist blur. A growing body of experimental evidence suggests that chemically amplified resists have an intrinsic bias that limits resolution,[5-12] which given aggressive scaling of gate length, critical dimension control will present a very difficult challenge at the 22 nm node.

Please login below to access the full text of this paper. If you are not currently an online member or subscriber sign-up today, it's free. For online membership, click here.

Email:
  Remember my User ID 
 

Not a member? Sign up today, it's free.

 
 
Search




Published By:
38 Miller Avenue, Suite 9, Mill Valley, CA 94941
415.381.6800 | 415.381.6803
www.mazikmedia.com
converse@mazikmedia.com
Disclaimer | Privacy Policy