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The resist road to the 22 nm technology
node is going to be a difficult one to ply.
Conventional resist technology will be
resolution-limited at the 22 nm design rule.
Chemical amplification chemistry runs into
“diffusional limits” with high-activation
energy resist systems that are not
extendible to this node, while lowactivation
energy ones may be extendible
to this node, but at the cost of significant
outgassing and poor line-edge roughness
(LER). While the chemical amplification concept has served the semiconductor industry very well since its invention in the early 1980s[2-4] in terms of high sensitivity and resolution, it is becoming apparent that by 2016, when the 22 nm technology node is expected to be in production, the very attributes of this concept that made resists based on it become the workhorses of the industry for the last 25 years will unfortunately become resolutionlimiting due to uncontrollable diffusion, image spreading, or resist blur. A growing body of experimental evidence suggests that chemically amplified resists have an intrinsic bias that limits resolution,[5-12] which given aggressive scaling of gate length, critical dimension control will present a very difficult challenge at the 22 nm node.
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