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Vibrational Spectroscopy of Ultra-Low-k Dielectric Materials
(6/21/2004) Future Fab Intl. Issue 17
By Nancy Klymko, IBM Microelectronics Division
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FTIR and Raman spectroscopy are complementary vibrational spectroscopy techniques that help elucidate the molecular bonding and molecular structure in low-k materials. Raman spectra arise from inelastic scattering of the incident energy from a laser source, as a function of molecular vibrational energy. FTIR spectra arise from absorption of polychromatic radiation at specific energies of molecular group vibrations. Due to different selection rules, the two techniques are sensitive to different types of bonding and molecular geometries.

Determination of the film chemistry is usually accomplished from a complementary analytical approach employing techniques such as RBS (Rutherford backscattering) and HFS (hydrogen forward scattering) for atomic composition, Auger or ToFSIMS (time of flight secondary ion mass spectrometry) depth profiling for elemental composition uniformity from top to bottom of the film, and FTIR (Fourier transform infrared) and Raman spectroscopy for determination of the molecular bonding chemistry within the film. The latter two techniques are complementary vibrational spectroscopy techniques.

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