|
Selective epitaxial growth (SEG) is
one of the new process candidates to
provide a solution for the production of
high-performance devices at the sub-65-
nm node when substantial integration
problems are encountered. However,
there are challenges in monitoring this
kind of new process. In this study, we’ve
demonstrated that applying suitable
metrology can result in good quantitative
methods for selectivity and epitaxy
quality monitor. Moreover, we can also
observe the precise information of the
incoming samples, which is critical to the
epitaxial growth. First, we will describe the daily monitor
method using KLA-Tencor’s Surfscan SP1
for the SEG process. The high sensitivity
of surface scattering responses to selective
and non-selective conditions was
proven. Quantitative measurement using
this time-saving new monitoring method
is being proposed. A method using KLATencor’s
ASET-F5x has also been
developed to characterize the grown
stack films before and after SEG in a
production line. Experimental results
show that not only can it provide the
quality of grown epitaxial layer, but it can
also provide critical information about
the sample surface on which SEG will
grow. The sample surface plays an
essential role in epitaxial growth and
determines if the SEG process is successful
or not.
Please login below to access the full text of this paper. If you are not currently an online member or subscriber sign-up today, it's free. For online membership, click here.
Not a member? Sign
up today, it's free.
|
