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In the not-too-distant future, the
extraordinarily minute scale of device features
will severely test the existing analysis
and metrology techniques currently in
use. To support the manufacturing processes
needed for next-generation technology
cycles, nanoscale materials analysis
and metrology for micro- and nanoelectronic
devices have to be established.
In a new approach aptly named “FABLAB”
these issues will be characterized by the
amalgamation of exploration into new
microscopy, scattering and spectroscopy
techniques in the offline laboratory with
the implementation of these techniques
for the purpose of nondestructive inline
metrology. This paper outlines the concept
and its implications for the changing
face of the industry’s needs as we step
deeper into the nano-age. Future micro- and nanoelectronics
with manufacturing at extraordinary
scales, new device architectures and
advanced materials will require atomicscale
modeling as well as structure and
materials characterization with
nanoscale resolution. For high-performance
microprocessors, material innovations
in both transistor gate stacks and
interconnect structures are necessary to
improve the product performance. For
advanced DRAMs with high aspect-ratio
trench capacitors, innovative processes
and new materials have to be introduced
to meet the requirements for DRAM cells
well beyond 100nm feature size[1-3].
These are not only exciting challenges to
process development and engineering
but also to process control: More than in
the past, understanding and control of
process variations will be keys for development
and manufacturing. For both process
development and process control (as
an inherent part of the manufacturing) at
future technology nodes, new analytics/
metrology approaches and techniques
are needed to control smaller
structures, new processes and materials.
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