The shrinking of integrated circuit devices is bringing an increased demand for in-line automated metrologies for structural control of vertical features. For example, vertical structure control is now important in advanced deep-trench DRAM. Model-Based Infrared Reflectometry (MBIR) is a new technology that offers compelling advantages for in-line monitoring of such DRAM structures, in addition to other applications. This article will discuss several aspects of in-line monitoring at a deep-trench DRAM fab, with specific examples related to yield issues. Tool performance and future applications will be highlighted.

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