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Thursday, April 24, 2014

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Extending ArF Immersion Through Scanner Performance and Computational Lithography

Contributed by Nikon Precision

IC manufacturing technology continues to advance rapidly to meet next-generation requirements. Although integration of EUV lithography has been further delayed due to complex infrastructure issues, the past year has been marked with tremendous innovations in 193 nm scanner technology. Extension of ArF immersion lithography is imperative for chipmakers to maintain their roadmaps, with enhanced tool performance and flexible computational lithography solutions equally critical in extending 193 nm capabilities.

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July 2013 Issue:

Future Visions & Current Concerns

About every 10 years, the semiconductor industry reinvents itself in order to make progress. In this issue of Future Fab International, you will find two significant examples of this innovation process.

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New Technologies & Device Structures

As Future Fab wraps up a distinguished run of service to the international semiconductor community, I would like to take this opportunity to thank my colleagues for offering concise, timely and relevant technology updates and contributions through this publication. Like the phoenix, I trust that new publication opportunities will arise from these ashes that will be well positioned to catch and ride the next tidal waves of emerging technologies.

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Chip Architecture & Integration

For nearly 50 years, Moore’s Law has reliably predicted the doubling of transistors on an integrated circuit every two years. However, in recent years, whispers that “Moore’s Law is dead” abound, as keeping on the technology treadmill bumps up against the limits of physics, economic viability, and the very nature of the application space for semiconductors in a post-PC world.

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Lithography Landscape

In this edition of Future Fab, Yayi Wei and David Cho of GLOBALFOUNDRIES examine the conundrum facing lithographers seeking patterning solutions for the 10 nm node, as the technical and cost challenges of extending 1.35NA 193 nm immersion patterning become more daunting.

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Metrology, Inspection & Failure Analysis

Amid the continued advances of 3D interconnect technology, related improvements in the associated metrology have become ever-more critical.

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193nm Immersion-Related Defects and Strategies of Defect Reduction
193nm immersion lithography has water filled in between the front lens and wafer, forming a water meniscus. The water meniscus moves with the exposure head across the wafer. Various physical and chemical interactions between the water and resist stack can occur, which lead to water immersion-related defects: Bubbles in the water can distort the exposure image; water droplets left on the wafer surface may deteriorate the local resist performance; water can transport particles to the wafer surface and deposit there. This paper analyzes the formation mechanisms of the immersion-related defects, and strategies for defects reduction are proposed.
Future Fab Intl.Volume 22, 1/9/2007


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